In this paper, we present a top-down fabrication method of single-crystal silicon nanowires. The method employs the popular photolithography technique and etching-rate dependent on the crystal orientation of single-crystal silicon in KOH solution. Using surface wet adhesion and reduced silicon dioxide etching, nanoscale SiO2 mask line patterns with width from 45 nm to 200 nm and length up to 120 µm are successfully patterned.
